Device I: Silicon nMOSFETs (SiO₂ Gate Dielectric)
Parametric Information: VT ≈ - 0.1 V, SS ≈ 130 mV/dec
Device Size: L: 5-50 μm (interval 5 μm), W: 190-280 μm (interval 10 μm), EOT = 10 nm
Materials: Si, SiO₂
Wafer Price (incl. VAT): ₩ 3,300,000 (USD 2,700) per 4" wafer
Die Price (incl. VAT): ₩ 330,000 (USD 270) per die
References:
[14] S.-M. Kang et al., ACS Appl. Electron. Mater., vol. 8, no. 6, pp. 2322–2331, Mar. 2026. [ Website ]
[13] M.-K. Lee et al., Semicond. Sci. Technol., vol. 41, no. 2, p. 025012, Feb. 2026. [ Website ]
[12] E.-C. Yun et al., IEEE Trans. Electron Devices, vol. 73, no. 1, pp. 707-711, Jan. 2026. [ Website ]
[11] M.-W. Kim et al., Semicond. Sci. Technol., vol. 40, no. 11, p. 115017, Nov. 2025. [ Website ]
[10] J.-W. Yeon et al., IEEE Trans. Device Mater. Reliab., vol. 24, no. 4, pp. 618-623, Dec. 2024. [ Website ]
[9] T.-H. Kil, et al., IEEE Trans. Electron Devices, vol. 71, no. 9, pp. 5177-5181, Sept. 2024. [ Website ]
[8] T.-H. Kil et al., IEEE Trans. Electron Devices, vol. 71, no. 2, pp. 1078–1083, Feb. 2024. [ Website ]
[7] D.-H. Jung et al., IEEE Trans. Electron Devices, vol. 71, no. 1, pp. 425–430, Jan. 2024. [ Website ]
[6] D.-H. Jung et al., Microelectron. Reliab., vol. 151, no. 115276, Dec. 2023. [ Website ]
[5] D.-H. Wang et al., IEEE Trans. Device Mater. Reliab., vol. 23, no. 2, pp. 297–301, Jun. 2023. [ Website ]
[4] J.-Y. Ku et al., IEEE Trans. Device Mater. Reliab., vol. 23, no. 3, pp. 276–280, Jun. 2023. [ Website ]
[3] J.-M. Yu et al., Solid-State Electron., vol. 197, no. 108421, Nov. 2022. [ Website ]
[2] D.-H. Jung et al., IEEE Trans. Device Mater. Reliab., vol. 22, no. 3, pp. 457–460, Sept. 2022. [ Website ]
[1] D.-H. Wang et al., Materials, vol. 15, no. 5, p. 1960, Mar. 2022. [ Website ]
Device II: Silicon nMOSFETs (HKMG)
Parametric Information: VT ≈ 0.3 V, SS ≈ 90 mV/dec
Device Size: L: 5-10 μm (interval 5 μm), W: 80-120 μm (interval 20 μm), EOT = 3 nm (HKMG)
Materials: Si, SiO₂, HfO₂, TiN
Wafer Price (incl. VAT): ₩ 9,900,000 (USD 8,100) per 4" wafer
Die Price (incl. VAT): ₩ 990,000 (USD 810) per die
References:
[2] S.-J. Jeon et al., Semicond. Sci. Technol. vol. 40, no. 8, p. 08LT01, Aug. 2025. [ Website ]
[1] T.-H. Kil et al., IEEE J. Electron Devices Soc., vol. 12, no. 1, pp. 1030-1033, Dec. 2024. [ Website ]