Service I: Low-Temperature Deuterium Annealing (LTDA) (4" Wafer)

• Service Fee (incl. VAT): ₩ 3,300,000 (USD 2,700) per run (up to 3 wafers per run)

• Process Conditions: Diluted deuterium, 300 ℃, 10 bar, and 1 hr

• References:

 [12] M.-J. Choi et al., IEEE Electron Device Lett., vol. 47, no. 6,  pp. 1221–1224, Jun. 2026. [ Website ]   

 [11] W. Byun et al., J. Mater. Chem. C, vol. 14, no. 21,  pp. 9269–9278, Jun. 2026. [ Website ]    

 [10] S. Han et al., Appl. Phys. Lett., vol. 128, no. 3, p. 033502, Mar. 2026. [ Website ] 

   [9] M.-W. Kim et al., Semicond. Sci. Technol., vol. 40, no. 11, p. 115017, Nov. 2025. [ Website ] 

   [8] J.-W. Yeon et al., IEEE Trans. Nanotechnol., vol. 24, pp. 54–58, Jan. 2025. [ Website ]  

   [7] T.-H. Kil et al., IEEE J. Electron Devices Soc., vol. 12, no. 1, pp. 1030-1033, Dec. 2024. [ Website ]  

   [6] T.-H. Kil et al., IEEE Trans. Electron Devices,  vol. 71, no. 9,  pp. 5177-5181, Sept. 2024. [ Website ]  

   [5] T.-H. Kil et al., IEEE Trans. Electron Devices,  vol. 71, no. 2,  pp. 1078–1083, Feb. 2024. [ Website ]  

   [4] D.-H. Jung et al., Microelectron. Reliab., vol. 151, no. 115276, Dec. 2023. [ Website ]  

   [3] J.-Y. Ku et al., IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3958–3962, Jul. 2023. [ Website ] 

   [2] D.-H. Wang et al., IEEE Trans. Device Mater. Reliab., vol. 23, no. 2, pp. 297–301, Jun. 2023. [ Website ] 

   [1] J.-M. Yu et al., Solid-State Electron., vol. 197, no. 108421, Nov. 2022. [ Website ]  

Service II: Rapid Deuterium Annealing (RDA) (6" Wafer)

• Service Fee (incl. VAT): ₩ 4,400,000 (USD 3,600) per run (up to 5 wafers per run)

• Process Conditions: Diluted deuterium, 250 ℃, 10 bar, and 3 mins

• References:

   [4] M.-K. Lee et al., Semicond. Sci. Technol., vol. 41, no. 2,  p. 025012, Feb. 2026. [ Website ]

   [3] E.-C. Yun et al., IEEE Trans. Electron Devices, vol. 73, no. 1,  pp. 707-711, Jan. 2026. [ Website ]

   [2] M.-W. Kim et al., Semicond. Sci. Technol., vol. 40, no. 11, p. 115017, Nov. 2025. [ Website ] 

   [1] S.-J. Jeon et al., Semicond. Sci. Technol., vol. 40, no. 8,  p. 08LT01, Aug. 2025. [ Website ] 

Service III: Wafer-Level Reliability Measurement (8" Wafer)

• Service Fee (incl. VAT): ₩ 660,000 (USD 540) per hour 

• Measurement Capabilities

Iᴅ–Vɢ and Iᴅ–Vᴅ electrical characterization (raw data provided) 

Bias-Temperature Instability (BTI) 

Hot-Carrier Injection (HCI) 

Time-Dependent Dielectric Breakdown (TDDB)

• Specifications 

Equipment: Agilent B1500A Semiconductor Device Analyzer 

Minimum Measurement Range: 1pA (3x HRSMUs with 3x ASUs, CVU, and PMU modules)

Wafer Size: 8-inch or less 

Temperature: Room Temperature (RT) ~ 200 ℃

Minimum Pad Size: ≥ 50 nm x 50 nm